Electro-optical device and electronic apparatus

ABSTRACT

An electro-optical device includes one or more control lines that include a scanning line, a data line and a pixel circuit. The pixel circuit has a drive transistor, a write-in transistor with a gate which is electrically connected to the scanning line, a light-emitting element that emits light at a brightness that depends on the size of a current that is supplied through the drive transistor, and a control line which overlaps the gate of the drive transistor when viewed from a direction that is perpendicular to a surface of a substrate on which the pixel circuit is formed is included in the one or more control lines.

This is a Continuation of application Ser. No. 17/168,421 filed Feb. 5,2021, which is a Continuation of application Ser. No. 16/734,648 filedJan. 6, 2020, which is a Continuation of application Ser. No.15/629,452, filed Jun. 21, 2017, which is a Continuation of applicationSer. No. 15/144,186, filed May 2, 2016, which is a Continuation ofapplication Ser. No. 14/678,552, filed Apr. 3, 2015, which is aContinuation of application Ser. No. 13/848,323 filed Mar. 21, 2013,which claims priority of Japanese Patent Application No. 2012-084743,filed Apr. 3, 2012. The disclosures of the prior applications are herebyincorporated by reference herein in their entirety.

BACKGROUND 1. Technical Field

The present invention relates to an electro-optical device and anelectronic apparatus.

2. Related Art

In recent years, various types of electro-optical devices that displayimages using light-emitting elements such as organic light-emittingdiode (hereinafter referred to as “OLED”) elements have been proposed.In such electro-optical devices, pixel circuits that includelight-emitting elements, transistors and the like are provided tocorrespond to the pixels of images that are to be displayed. Morespecifically, a configuration in which, in addition to a plurality ofpixel circuits that correspond to the pixels of images that are to bedisplayed being provided in matrix form, a control line such as ascanning line is provided in each row in order to drive the plurality ofpixel circuits, is common (for example, refer to JP-A-2007-316462).

SUMMARY

However, in recent years, there are many cases in which a smallerdisplay size and a higher definition of display is required inelectro-optical devices. In such cases, a control line with a narrowerpitch is necessary in order to dispose pixel circuits at high density.

An advantage of some aspects of the invention is that it is possible torealize a high density wiring of a plurality of control lines thatinclude a plurality of scanning lines and to realize a higher definitionof display or a smaller display size.

In order solve the abovementioned problem, according to an aspect of theinvention, there is provided an electro-optical device which is providedwith a scanning line, a data line that intersects the scanning line anda pixel circuit that is provided to correspond to the intersection ofthe scanning line and the data line, in which the pixel circuit has adrive transistor, a write-in transistor with a gate which iselectrically connected to the scanning line, a first storage capacitythat stores a charge that depends on a data signal that is suppliedthrough the data line and the write-in transistor, and a light-emittingelement that emits light at a brightness that depends on the size of acurrent that is supplied through the drive transistor, and the scanningline and the gate of the drive transistor overlap when viewed from adirection that is perpendicular to a surface of a substrate on which thepixel circuit is formed.

According to this aspect of the invention, since the scanning line iswired on the gate of the drive transistor, in comparison with a case inwhich the scanning line is wired not to intersect the gate of the drivetransistor, the restrictions on space can be relaxed when providing thescanning line. As a result of this configuration, a scanning line with anarrower pitch and higher density of wiring are possible. That is,according to the aspect of the invention, it is possible to dispose aplurality of pixel circuits at a higher density, and a higher definitionof display and a smaller display size are possible. Additionally, in theaspect of the invention, the write-in transistor may, for example, beelectrically connected between the gate of the drive transistor and thedata line.

In addition, the electro-optical device according to the aspect of theinvention is provided with one or more control lines that include ascanning line, a data line that intersects the scanning line and a pixelcircuit that is provided to correspond to the intersection of thescanning line and the data line, the pixel circuit has a drivetransistor, a write-in transistor with a gate which is electricallyconnected to the scanning line, a first storage capacity that stores acharge that depends on a data signal that is supplied through the dataline and the write-in transistor, and a light-emitting element thatemits light at a brightness that depends on the size of a current thatis supplied through the drive transistor, and a control line whichoverlaps the gate of the drive transistor when viewed from a directionthat is perpendicular to a surface of a substrate on which the pixelcircuit is formed is included in the one or more control lines.

According to this aspect of the invention, since the control line iswired on the gate of the drive transistor, in comparison with a case inwhich the control line is wired not to intersect the gate of the drivetransistor, the restrictions on space can be relaxed when providing thecontrol line. As a result of this configuration, a control line with anarrower pitch and higher density of wiring are possible. That is,according to the aspect of the invention, it is possible to dispose aplurality of pixel circuits at a higher density, and a higher definitionof display and a smaller display size are possible.

In addition, it is preferable that the abovementioned electro-opticaldevice be further provided with a scanning line drive circuit thatcontrols the operation of the pixel circuit, the write-in transistor isturned on in a case in which the scanning line drive circuit supplies afirst potential to the scanning line and is turned off in a case inwhich the scanning line drive circuit supplies a second potential to thescanning line, the scanning line and the gate of the drive transistoroverlap when viewed from a direction that is perpendicular to a surfaceof a substrate on which the pixel circuit is formed, and when thescanning line drive circuit sets a period in which the potential that issupplied to the scanning line switches from the second potential to thefirst potential as a first switching period, and the scanning line drivecircuit sets a period in which the potential that is supplied to thescanning line switches from the first potential to the second potentialas a second switching period, it is preferable that the duration of thesecond switching period be longer than the duration of the firstswitching period.

In a case in which the gate of the drive transistor and the scanningline intersect in a plan view, the capacity is leeched between the gateof the drive transistor and the scanning line. Further, in a case inwhich the potential of the scanning line fluctuates rapidly, thefluctuation in potential affects the gate of the drive transistor andthe potential of the gate of the drive transistor changes.

The drive transistor supplies a current of a size that depends on thevoltage between a determined gate and source to the light-emittingelement when the write-in transistor is turned off, and thelight-emitting element emits light at a brightness that depends on thesize of the current. Therefore, if the potential of the gate of thedrive transistor changes when the write-in transistor is turned off(that is, after the write-in transistor has been established as avoltage that defines the brightness of the light-emitting element), thelight-emitting element emits light at a brightness that is differentfrom the defined brightness, and the display quality of theelectro-optical device is reduced.

In contrast to this, the scanning line drive circuit according to anaspect of the invention causes the change in potential of the scanningline when the write-in transistor is turned off to change gradually incomparison with the change in potential when the write-in transistor isturned on. According to this configuration, the fluctuation in thepotential of the scanning line when the write-in transistor is turnedoff prevents propagation to the gate of the drive transistor, and it ispossible for the light-emitting element to emit light at a definedbrightness. That is, according to the electro-optical device of theaspect of the invention, it is possible to realize a control line with anarrower pitch without causing a deterioration in display integrity.

In addition, the pixel circuit may be provided with a first switchingtransistor that is electrically connected between the gate and the drainof the drive transistor, and the one or more control lines may include afirst control line that is electrically connected to the gate of thefirst switching transistor.

In such a case, it is preferable that the first switching transistor beturned on in a case in which the scanning line drive circuit supplies afirst potential to the first control line, turned off in a case in whichthe scanning line drive circuit supplies a second potential to the firstcontrol line, the first control line and the gate of the drivetransistor overlap when viewed from a direction that is perpendicular toa surface of a substrate on which the pixel circuit is formed, and ifthe scanning line drive circuit sets a period in which the potentialthat is supplied to first control line switches from the secondpotential to the first potential as a third switching period, and thescanning line drive circuit sets a period in which the potential that issupplied to the first control line switches from the first potential tothe second potential as a fourth switching period, it is preferable thatthe duration of the fourth switching period be longer than the durationof the third switching period.

In a case in which the gate of the drive transistor and the firstswitching transistor intersect in a plan view, the capacity is leechedbetween the gate of the drive transistor and the first control line.Further, in a case in which the potential of the first control linefluctuates rapidly, the fluctuation in potential affects the gate of thedrive transistor and the potential of the gate of the drive transistorchanges.

Incidentally, in a case in which the first switching transistor isturned on, the gate of the drive transistor and the source thereof areelectrically connected, and the voltage between the gate and source ofthe drive transistor is established as a value that compensates forvariation in the threshold voltage of each pixel circuit. Therefore, ifthe potential of the gate of the drive transistor changes when the firstswitching transistor is turned off (that is, after thresholdcompensation has been performed), it is no longer possible to compensatefor variation in the threshold voltage of the drive transistor of eachpixel circuit, and display uniformity is lost.

In contrast to this, the scanning line drive circuit according to thisaspect causes the change in potential of the first control line when thefirst switching transistor is turned off to change gradually incomparison with the change in potential when the write-in transistor isturned on. According to this configuration, the fluctuation in thepotential of the first control line when the first switching transistoris turned off prevents propagation to the gate of the drive transistor,and prevents the potential of the gate of the drive transistor fromchanging from the potential at which threshold compensation isperformed. That is, according to the electro-optical device of theinvention, since it is even possible to prevent the occurrence or thelike of display unevenness like the impairment of display uniformity ina case in which the first control line is disposed on the gate of thedrive transistor, both a smaller electro-optical device and higherdefinition of display, and a high integrity display are possible.

In addition, the pixel circuit may be provided with a second switchingtransistor that is electrically connected between the drive transistorand the light-emitting element, and the one or more control lines mayinclude a second control line that is electrically connected to the gateof the second switching transistor.

In such a case, it is preferable that the second switching transistor beturned on in a case in which the scanning line drive circuit supplies afirst potential to the second control line, turned off in a case inwhich the scanning line drive circuit supplies a second potential to thesecond control line, the second control line and the gate of the drivetransistor overlap when viewed from a direction that is perpendicular toa surface of a substrate on which the pixel circuit is formed, and ifthe scanning line drive circuit sets a period in which the potentialthat is supplied to second control line switches from the secondpotential to the first potential as a fifth switching period, and thescanning line drive circuit sets a period in which the potential that issupplied to the second control line switches from the first potential tothe second potential as a sixth switching period, it is preferable thatthe duration of the fifth switching period be longer than the durationof the sixth switching period.

According to this aspect, it is possible for the fluctuation in thepotential of the second control line when the second switchingtransistor is turned on to prevent propagation to the gate of the drivetransistor. According to this configuration, it is possible to realize acontrol line with a narrower pitch without causing a deterioration indisplay integrity.

In addition, the pixel circuit may be provided with a third switchingtransistor that is electrically connected between a feed line that issupplied with a predetermined reset potential and the light-emittingelement, and the one or more control lines may include a third controlline that is electrically connected to the gate of the third switchingtransistor.

In such a case, it is preferable that the third switching transistor beturned on in a case in which the scanning line drive circuit supplies afirst potential to the third control line, turned off in a case in whichthe scanning line drive circuit supplies a second potential to the thirdcontrol line, the third control line and the gate of the drivetransistor overlap when viewed from a direction that is perpendicular toa surface of a substrate on which the pixel circuit is formed, and whenthe scanning line drive circuit sets a period in which the potentialthat is supplied to the third control line switches from the secondpotential to the first potential as a seventh switching period, and thescanning line drive circuit sets a period in which the potential that issupplied to the third control line switches from the first potential tothe second potential as an eighth switching period, it is preferablethat the duration of the eighth switching period be longer than theduration of the seventh switching period.

According to this aspect, it is possible for the fluctuation in thepotential of the third control line when the third switching transistoris turned off to prevent propagation to the gate of the drivetransistor. According to this configuration, it is possible to realize acontrol line with a narrower pitch without causing a deterioration indisplay integrity.

In addition, it is preferable that the abovementioned electro-opticaldevice be provided with a data line drive circuit that is electricallyconnected to the data line, a control circuit that controls theoperations of the scanning line drive circuit and the data line drivecircuit, and a second storage capacity that is provided to correspond tothe data line and stores the potential of the data line, the data linedrive circuit be provided with a first potential line to which apredetermined initial potential is supplied from the control circuit, asecond potential line to which a reference potential is supplied fromthe control circuit and a level shift circuit which is provided tocorrespond to the data line, the level shift circuit be provided with athird storage capacity, a first electrode of which is electricallyconnected to the data line, a first transistor which is electricallyconnected between the first electrode of the third storage capacity andthe first potential line and a second transistor which is electricallyconnected between the second electrode of the third storage capacity andsecond potential line, the control circuit maintain the first transistorin an on state in a first period, the scanning line drive circuitmaintain the write-in transistor in an on state and the control circuitmaintain the second transistor in an on state in addition to maintainingthe first transistor in an off state in a second period that startsafter the first period has finished, and the scanning line drive circuitmaintain the write-in transistor in an on state, the control circuitmaintain the first transistor and the second transistor in an off stateand the second electrode of the third storage capacity be supplied witha potential on the basis of an image signal that defines the brightnessof the light-emitting element in a third period that starts after thesecond period has finished.

According to this aspect of the invention, the data line is connected tothe second storage capacity and the third storage capacity, and thesecond electrode of the third storage capacity supplies a potential onthe basis of an image signal that defines the brightness of thelight-emitting element. Therefore, the width of a fluctuation in thepotential of the data line becomes a width of the fluctuation in thepotential that is supplied to the second electrode of the third storagecapacity that is compressed depending on the capacity ratio of thesecond storage capacity and the third storage capacity. That is, therange of the fluctuation in the potential of the data line is narrowedin comparison with the range of the fluctuation of the potential basedon the image signal. As a result of this, it is even possible to set thepotential of the gate of the drive transistor with a fine degree ofaccuracy when the image signal is not recorded with a fine degree ofaccuracy. Therefore, it is possible to supply a current to thelight-emitting element with a high degree of accuracy, and a highintegrity display is possible. In addition, since it is possible tosuppress the width of the change in potential of the data line to besmall, it is possible to prevent the occurrence of crosstalk, unevennessand the like that are caused by fluctuations in the potential of thedata line.

Additionally, the electro-optical device according to the aspect of theinvention determines the potential of the gate of the drive transistorby supplying a charge to the first storage capacity and the secondstorage capacity through the data line from the first electrode of thethird storage capacity. More specifically, the potential of the gate ofthe drive transistor is decided by the capacitance value of the firststorage capacity, the capacitance value of the second storage capacityand the quantity of the charge that the third storage capacity suppliesto the first storage capacity and the second storage capacity. In ahypothetical case in which the electro-optical device is not providedwith the second storage capacity, the potential of the gate of the drivetransistor is decided by the capacitance value of the first storagecapacity and the charge that the third storage capacity supplies.Accordingly, in a case in which the capacitance value of the firststorage capacity has relative variation between each pixel circuitcaused by accidental errors in the semiconductor process thereof, thepotential of the gate of the drive transistor also has variation in eachpixel circuit thereof. In such a case, display unevenness occurs and thedisplay quality is reduced.

In contrast to this, an aspect of the invention is provided with asecond storage capacity that stores the potential of the data line.Since the second storage capacity is provided to correspond to each dataline, in comparison with the first storage capacity that is providedinside the pixel circuit, it is possible to configure the second storagecapacity to have an electrode with a large area. Therefore, incomparison with the first storage capacity, the second storage capacityhas less relative variation in capacitance value caused by accidentalerrors in the semiconductor process thereof. According to thisconfiguration, it is possible to prevent variation in the potential ineach pixel circuit of the gate of the drive transistor, and a highintegrity display in which the occurrence of display unevenness isprevented is possible.

In addition, it is preferable that the level shift circuit be providedwith a fourth storage capacity, a potential that shows the image signalbe supplied to the first electrode of the fourth storage capacity in atleast a portion of a period from the start of the first period to thestart of the third period, and the first electrode of the fourth storagecapacity be electrically connected to the second electrode of the thirdstorage capacity in the third period.

According to this aspect of the invention, the image signal is suppliedto the first electrode of the fourth storage capacity in the firstperiod and the second period, and in addition to being storedtemporarily, the image signal is supplied to the gate of the drivetransistor through the third storage capacity in the third period.

In a hypothetical case in which the electro-optical device is notprovided with the fourth storage capacity, all of the operations thatsupply a potential that shows the image signal to the gate of the drivetransistor have to be performed in the third period, and it is necessaryset the third period to be sufficiently long.

In contrast to this, since in an aspect of the invention, an imagesignal supply operation and a data line or the like initializationoperation are performed in parallel in the first period and the secondperiod, it is possible to relax the restrictions on time of theoperations that are to be executed in a single horizontal scan period.According to this configuration, in addition to a reduction in the speedof the image signal supply operation being possible, it is possible tosufficiently secure a period in which the initialization of the dataline or the like is performed.

In addition, according to this aspect of the invention, since the sizeof the fluctuation in potential based on the image signal is compressedusing the fourth storage capacity in addition to the first storagecapacity, the second storage capacity and the third storage capacity, itis possible to supply a current to the light-emitting element with afine degree of accuracy.

In addition, it is preferable that the scanning line drive circuitmaintain the first switching transistor in an on state in the secondperiod, maintain the first switching transistor in an off state inperiods other than the second period, and maintain the second switchingtransistor in an off state in addition to maintaining the thirdswitching transistor in an on state in the first period, the secondperiod and the third period.

According to this aspect of the invention, it is possible to set thepotential of the gate of the drive transistor to a potential thatcorresponds to the threshold voltage of the drive transistor by settingthe first switching transistor to an on state in the second period, andit is possible to compensate for variation in the threshold voltage ofthe drive transistor of each pixel circuit.

In addition, according to this aspect of the invention, it is possibleto suppress the effect of the stored voltage of the capacity thatleeches to the light-emitting element by setting the third switchingtransistor to an on state in the first period to the third period.

Additionally, in addition to an electro-optical device, it is possiblefor an aspect of the invention to be an electronic apparatus that hasthe electro-optical device. Examples of the electronic apparatustypically include display devices such as head-mounted displays (HMDs)and electronic viewfinders.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be described with reference to the accompanyingdrawings, wherein like numbers reference like elements.

FIG. 1 is a perspective view that shows the configuration of anelectro-optical device according to an embodiment of the invention.

FIG. 2 is a view that shows the configuration of the sameelectro-optical device.

FIG. 3 is a view that shows a data line drive circuit in the sameelectro-optical device.

FIG. 4 is a view that shows a pixel circuit in the same electro-opticaldevice.

FIG. 5 is a plan view that shows the configuration of the pixel circuitin the same electro-optical device.

FIG. 6 is a partial cross-sectional view that shows the configuration ofthe pixel circuit in the same electro-optical device.

FIG. 7 is a timing chart that shows the operations of the sameelectro-optical device.

FIG. 8 is an operation explanatory view of the same electro-opticaldevice.

FIGS. 9A and 9B are views that describe changes in the potentials ofgate nodes of the same electro-optical device.

FIG. 10 is an explanatory view that shows amplitude compression of adata signal in the same electro-optical device.

FIG. 11 is an explanatory view that shows the characteristics of atransistor in the same electro-optical device.

FIG. 12 is a plan view that shows the configuration of a pixel circuitin an electro-optical device according to modification example 1.

FIG. 13 is a timing chart that shows the operations of the sameelectro-optical device.

FIG. 14 is a plan view that shows the configuration of a pixel circuitin an electro-optical device according to modification example 2.

FIG. 15 is a timing chart that shows the operations of the sameelectro-optical device.

FIG. 16 is a perspective view that shows an HMD that uses theelectro-optical device according to the embodiment and the like.

FIG. 17 is a view that shows the optical configuration of the HMD.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, embodiments of the invention will be described withreference to the drawings.

Embodiment

FIG. 1 is a perspective view that shows the configuration of anelectro-optical device 1 according to an embodiment of the invention.The electro-optical device 1 is for example, a micro display thatdisplays images in a head-mounted display.

As shown in FIG. 1 , the electro-optical device 1 is provided with adisplay panel 2 and a control circuit 3 that controls the operation ofthe display panel 2. The display panel 2 is provided with a plurality ofpixel circuits and a drive circuit that drives the pixel circuits. Inthe present embodiment, the plurality of pixel circuits and the drivecircuit that the display panel 2 is provided with are formed on asilicon substrate and an OLED, which is an example of a light-emittingelement is used in the pixel circuits. In addition, the display panel 2is for example, connected to a terminal of an FPC (Flexible PrintedCircuit) substrate 84 in addition to being accommodated in a frame-likecase 82 that is open in a display section thereof.

In addition to a semiconductor chip control circuit 3 being mounted inthe FPC substrate 84 using COF (Chip On Film) technology, a plurality ofterminals 86 are provided and connected to an upper level circuit thatis not shown in the drawing.

FIG. 2 is a block view that shows the configuration of theelectro-optical device 1 according to the embodiment. As describedabove, the electro-optical device 1 is provided with a display panel 2and a control circuit 3.

Digital image data Video is supplied from the upper level circuit thatis not shown in the drawing to the control circuit 3 in synchronizationwith a synchronizing signal. In this case, the image data Video is forexample, data that defines the gradation level of the pixels of an imagethat is to be displayed on the display panel 2 (strictly speaking, adisplay section 100 that will be described later) in 8 bits. Inaddition, the synchronizing signal is a signal that includes a verticalsynchronizing signal, a horizontal synchronizing signal and a dot clocksignal.

The control circuit 3 generates various control signals and supplies theforegoing to the display panel 2 on the basis of the synchronizingsignal. More specifically, the control circuit 3 supplies a controlsignal Ctr, a negative logic control signal /Gini, a positive logiccontrol signal Gref, a positive logic control signal Gcpl, a negativelogic control signal /Gcpl that has a logically inverted relationshipwith the positive logic control signal Gcpl, control signals Sel (1),Sel (2) and Sel (3), and control signals /Sel (1), /Sel (2) and /Sel (3)that have logically inverted relationships with the control signals Sel(1), Sel (2) and Sel (3) to the display panel 2. In this case, thecontrol signal Ctr is a signal that includes a plurality of signals suchas a pulse signal, a clock signal and an enable signal. Additionally,there are cases in which the control signals Sel (1), Sel (2) and Sel(3) are referred to as a control signal Sel and those in which thecontrol signals /Sel (1), /Sel (2) and /Sel (3) are referred to as acontrol signal /Sel.

In addition, the control circuit 3 supplies various potentials to thedisplay panel 2. More specifically, the control circuit 3 supplies apredetermined reset potential Vorst, a predetermined initial potentialVini, a predetermined reference potential Vref and the like to thedisplay panel 2.

Furthermore, the control circuit 3 generates an analog image signal Vidon the basis of the image data Video. More specifically, a look-up tablein which a potential that shows the image signal Vid, and a brightnessof the light-emitting element (an OLED 130 to be described later) thatthe display panel 2 is provided with are associated and stored, isprovided in the control circuit 3. Further, the control circuit 3generates an image signal Vid that shows a potential that corresponds tothe brightness of the light-emitting element that is defined by imagedata Video by referring to the look-up table, and supplies the imagesignal Vid to the display panel 2.

As shown in FIG. 2 , the display panel 2 is provided with a displaysection 100, and drive circuits (a data line drive circuit 10 and ascanning line drive circuit 20) that drives the display section 100.

Pixel circuits 110 that correspond to the pixels of an image to bedisplayed are arranged in matrix form in the display section 100. Inmore detail, in the display section 100, m rows of scanning lines 12 areprovided to extend in the horizontal direction (the X direction) in thedrawing, and in addition, (3n) columns of data lines 14 that are groupedevery three columns are provided to extend in the vertical direction(the Y direction) in the drawing and to have mutual electricalinsulation from each scanning line 12. Further, pixel circuits 110 areprovided to correspond to the intersecting sections of m rows ofscanning lines 12 and (3n) columns of data lines 14. Therefore, in theembodiment, the pixel circuits 110 are arranged in matrix from with mvertical rows×(3n) horizontal columns.

In this case, m and n are both positive integers. In order todiscriminate the rows among the matrix of the scanning lines 12 and thepixel circuits 110, there are cases in which the foregoing are calledrows 1, 2, 3, . . . , (m−1) and m in order from the top of the drawing.In the same manner, in order to discriminate the columns of the matrixof the data lines 14 and the pixel circuits 110, there are cases inwhich the foregoing are called columns 1, 2, 3, . . . , (3n−1), and (3n)in order from the left of the drawing. In addition, in order tonormalize and describe the groups of data lines 14, if a j integers thatare one or more and n or less are used, counting from the left, the datalines 14 of a (3j−2)^(th) column, a (3j−1)^(th) column and a (3j)^(th)column belong to a j^(th) group.

Additionally, three pixel circuits 110 that correspond to theintersections of scanning lines 12 of the same row and three columns ofdata lines 14 that belong to the same group respectively correspond topixels of R (red), G (green) and B (blue), and these three pixelsrepresent 1 dot of a color image that is to be displayed. That is, aconfiguration that represents the color of a dot using the lightemission of an OLED that corresponds to R, G and B with additive colormixing is used in the embodiment.

In addition, as shown in FIG. 2 , (3n) columns of feed lines 16 areprovided in the display section 100 to extend in the vertical directionand to have mutual electrical insulation from each scanning line 12. Thepredetermined reset potential Vorst is mutually fed to each feed line16. In this case, in order to discriminate the columns of the feed lines16, there are cases in which the foregoing are called the 1, 2, 3, . . ., (3n), and (3n+1)^(th) column of the feed lines 16 in order from theleft of the drawing. Each feed lines 16 from a 1^(st) column to a(3n)^(th) column is provided to correspond to each data line 14 of a1^(st) column to a (3n)^(th) column.

In addition, (3n) storage capacities 50 are provided in the displaypanel 2 to correspond to each data line 14 of the 1^(th) column to the(3n)^(th) column. The storage capacities 50 have two electrodes. A firstelectrode of each storage capacity 50 is connected to a data line 14 anda second electrode is connected to a feed line 16. That is, the storagecapacities 50 function as second storage capacities that store thepotential of each data line 14. Additionally, it is preferable that thestorage capacities 50 be formed by sandwiching an insulating body (adielectric body) between mutually adjacent feed lines 16 and data lines14. In such a case, the distance between the mutually adjacent feedlines 16 and data lines 14 is established so as to obtain a capacity ofa necessary size. Additionally, hereinafter, the capacitance value ofthe storage capacities 50 is given as Cdt.

In FIG. 2 , the storage capacities 50 are provided on the outside of thedisplay section 100, but this is an equivalent circuit, and the storagecapacities 50 may be provided on the inside of the display section 100.In addition, the storage capacities 50 may be provided to span from theinside of the display section 100 to the outside.

In accordance with the control signal Ctr, the scanning line drivecircuit 20 generates scanning signals Gwr for scanning each row of thescanning lines 12 in order during a period of a frame. In this case, thescanning signals Gwr that are supplied to the 1, 2, 3, . . . , andm^(th) scanning lines 12 are respectively given as Gwr(1), Gwr(2),Gwr(3), . . . , Gwr(m−1), and Gwr(m).

Additionally, in addition to the scanning signals Gwr(1) to Gwr(m) thescanning line drive circuit 20 generates various control signals foreach row in synchronization with the scanning signals Gwr and suppliesthe foregoing to the display section 100, but this is not shown in FIG.2 . In addition, the period of a frame may be a period necessary for theelectro-optical device 1 to display one cut (coma) of image, forexample, if the frequency of the vertical synchronizing signal that isincluded in the synchronizing signal is 120 Hz, the period of a frame is8.3 milliseconds, the period of one cycle thereof.

The data line drive circuit 10 is provided with (3n) level shiftcircuits LS that are provided to have a one-to-one correspondence witheach (3n) columns of data lines 14, n demultiplexers DM that areprovided for each three columns of data lines 14 that configure eachgroup and a data signal supply circuit 70.

The data signal supply circuit 70 generates data signals Vd(1), Vd(2), .. . , and Vd(n) on the basis of the image signal Vid and the controlsignal Ctr that are supplied from the control circuit 3. That is, thedata signal supply circuit 70 generates data signals Vd(1), Vd(2), . . ., and Vd(n) on the basis of an image signal Vid which time-divisionmultiplexes the data signals Vd(1), Vd(2), . . . , and Vd(n). Further,the data signal supply circuit 70 respectively supplies the data signalsVd(1), Vd(2), . . . , and Vd(n) to demultiplexers DM that correspond tothe 1, 2, . . . and n^(th) groups. In addition, the maximum possiblevalue of the potential of the data signals Vd(1) to Vd (n) is set asVmax and the minimum possible value as Vmin.

FIG. 3 is a circuit diagram for describing the configuration of ademultiplexer DM and a level shift circuit LS. FIG. 3 shows ademultiplexer DM that belongs to a j^(th) group and three level shiftcircuits LS that are connected to the demultiplexer DM as representativeexamples. Additionally, hereinafter, there are cases in which thedemultiplexer DM that belongs to the j^(th) group is given as DM(j).

Hereinafter, the configuration of a demultiplexer DM and a level shiftcircuit LS will be described with reference to FIG. 3 as well as FIG. 2.

As shown in FIG. 3 , the demultiplexer DM is an assembly of transmissiongates 34 that are provided for each column, and supplies a data signalin order to the three columns that configure each group. In this case,input ends of the transmission gates 34 that correspond to the columns(3j−2), (3j−1) and (3j) that belong to the j^(th) group are mutuallyinterconnected, and a data signal Vd(j) is supplied to a common terminalthereof. The transmission gate 34 that is provided in the (3j−2) column,which is the left end column in the j^(th) group, is on (conductive)when the control signal Sel(1) is at an H level (when the control signal/Sel(1) is at an L level). In the same manner, the transmission gate 34that is provided in the (3j−1) column, which is the central column inthe j^(th) group, is on when the control signal Sel(2) is at an H level(when the control signal /Sel(2) is at an L level), and the transmissiongate 34 that is provided in the (3j) column, which is the right endcolumn in the j^(th) group, is on when the control signal Sel(3) is atan H level (when the control signal /Sel(3) is at an L level).

The level shift circuit LS has a set of a storage capacity 41, a storagecapacity 44, a P channel MOS-type transistor 45 (first transistor), an Nchannel MOS-type transistor 43 (second transistor), and a transmissiongate 42 for each column, and shifts the potential of the data signalthat is output from the output end of the transmission gate 34 of eachcolumn.

In this case, the storage capacity 44 has two electrodes. A firstelectrode of the storage capacity 44 is electrically connected to acorresponding column of a data line 14 and either one of the source andthe drain of the transistor 45. In addition, a second electrode of thestorage capacity 44 is electrically connected the output end of thetransmission gate 42 and either one of the source and the drain of thetransistor 43 through a node h1. That is, the storage capacity 44functions as third storage capacity, the first electrode of which iselectrically connected to the data line 14. Additionally, thecapacitance value of the storage capacity 44 is set as Crf1.

The other of one of the source and the drain of the transistor 45 ofeach column is electrically connected to a feed line 61 (first potentialline). In addition, the control circuit 3 commonly supplies controlsignals /Gini to the gate of the transistor 45 of each column.Therefore, the transistor 45 is electrically connected to the firstelectrode of the storage capacity 44 (and the data line 14) and the feedline 61 when the control signal /Gini is at an L level and is notelectrically connected when the control signal /Gini is at an H level.Additionally, the predetermined initial potential Vini is supplied tothe feed line 61 from the control circuit 3.

The other of one of the source and the drain of the transistor 43 ofeach column is electrically connected to a feed line 62 (secondpotential line). In addition, the control circuit 3 commonly suppliescontrol signals Gref to the gate of the transistor 43 of each column.Therefore, the transistor 43 is electrically connected to the secondelectrode of the storage capacity 44, the node h1 and the feed line 62when the control signal Gref is at an H level and is not electricallyconnected when the control signal Gref is at an L level. Additionally,the reference potential Vref is supplied to the feed line 62 from thecontrol circuit 3.

The storage capacity 41 has two electrodes. A first electrode of thestorage capacity 41 is electrically connected to an input end of thetransmission gate 42 through a node h2. In addition, the output end ofthe transmission gate 42 is electrically connected to a second electrodeof the storage capacity 44 through the node h1.

The control circuit 3 commonly supplies control signals Gcpl and controlsignals /Gcpl to the transmission gate 42 of each column. Therefore, thetransmission gate 42 of each column is simultaneously on when thecontrol signal Gcpl is at an H level (when the control signal /Gcpl isat an L level).

The first electrode of the storage capacity 41 of each column iselectrically connected to output end of the transmission gate 34 and theinput end of the transmission gate 42 through the node h2. Further, whenthe transmission gate 34 is on, the data signal Vd(j) is supplied to thefirst electrode of the storage capacity 41 through the output end of thetransmission gate 34. That is, the storage capacity 41 functions as afourth storage capacity, the first electrode of which is supplied withthe data signal Vd(j). In addition, the second electrode of the storagecapacity 41 of each column is commonly connected to a feed line 63 towhich a potential Vss, which is a fixed potential, is supplied. In thiscase, the potential Vss may be a logic signal that corresponds to an Llevel of a scanning signal or a control signal. Additionally, thecapacitance value of the storage capacity 41 is set as Crf2.

The pixel circuits 110 will be described with reference to FIG. 4 .Since each pixel circuit 110 has the same configuration from anelectrical point of view, in this case, the pixel circuits 110 will bedescribed using a pixel circuit 110 of row i, column (3j−2), which ispositioned in the i^(th) row, and the (3j−2)^(th) column of the left endcolumn among the j^(th) group, as an example. Additionally, i is asymbol that commonly shows the rows in which pixel circuits 110 arearranged, and is an integer that is 1 or more and m or less.

As shown in FIG. 4 , the pixel circuit 110 includes P channel MOS-typetransistors 121 to 125, an OLED 130 and a storage capacity 132. Thescanning signal Gwr(i), and control signals Gcmp(i), Gel(i) and Gorst(i)are supplied to the pixel circuit 110. In this case, the scanning signalGwr(i), and the control signals Gcmp(i), Gel(i) and Gorst(i) arerespectively supplied by a scanning line drive circuit 20 thatcorresponds to the i^(th) row.

Additionally, although not shown in FIG. 2 , m rows of control lines 143(first control lines) that extend in the horizontal direction (the Xdirection) in FIG. 2 , m rows of control lines 144 (second controllines) that extend in the horizontal direction and m rows of controllines 145 (third control lines) that extend in the horizontal directionare provided in the display panel 2 (display section 100). Further, thescanning line drive circuit 20 respectively supplies control signalsGcmp(1), Gcmp(2), Gcmp(3), . . . and Gcmp(m) to the 1, 2, 3, . . . andm^(th) rows of control lines 143, respectively supplies control signalsGel(1), Gel(2), Gel(3), . . . and Gel(m) to the 1, 2, 3, . . . andm^(th) rows of control lines 144, and respectively supplies controlsignals Gorst(1), Gorst(2), Gorst(3), . . . and Gorst(m) to the 1, 2, 3,. . . and m^(th) rows of control lines 145. That is, the scanning linedrive circuit 20 commonly supplies the scanning signal Gwr(i), and thecontrol signals Gel(i), Gcmp(i) and Gorst(i) to (3n) pixel circuits 110positioned in the i^(th) row through the scanning line 12 and thecontrol lines 143, 144 and 145 of the i^(th) row respectively.Hereinafter, there are cases in which the scanning line 12, the controlline 143, the control line 144 and the control line 145 are referred toas “the control line”. That is, four control lines that include thescanning line 12 are provided in each row in the display panel 2according to the embodiment.

The gate of the transistor 122 is electrically connected to the scanningline 12 of the i^(h) row, and either one of the source and the drainthereof is electrically connected to the data line 14 of the (3j−2)^(th)column. In addition, the storage capacity 132 has two electrodes. Theother one of the source and the drain of the transistor 122 isrespectively electrically connected to the gate of the transistor 121,the first electrode of the storage capacity 132, and either one of thesource and the drain of the transistor 123. That is, the transistor 122is electrically connected between the transistor 121 and the data line14 and functions as a write-in transistor that controls the electricalconnection between the gate of the transistor 121 and the data line 14.Additionally, hereinafter, there are cases in which the wiring thatelectrically connects the gate of the transistor 121, the other one ofthe source and the drain of the transistor 122, one of the source andthe drain of the transistor 123 and the first electrode of storagecapacity 132 is referred to as a gate node g (of the transistor 121).

The source of the transistor 121 is electrically connected to a feedline 116, and the drain thereof is electrically connected to the otherone of the source and the drain of the transistor 123 and the source ofthe transistor 124. In this case, a potential Vel, which is on the highside of a power supply in the pixel circuit 110, is supplied to the feedline 116. This transistor 121 functions as a drive transistor that flowsa current that depends on the voltage between the gate and the source ofthe transistor 121.

The gate of the transistor 123 is electrically connected to the controlline 143, and the control signal Gcmp(i) is supplied thereto. Thistransistor 123 functions as a first switching transistor that controlsthe electrical connection between the gate and the drain of thetransistor 121.

The gate of the transistor 124 is electrically connected to the controlline 144, and the control signal Gel(i) is supplied thereto. Inaddition, the drain of the transistor 124 is respectively electricallyconnected to the source of the transistor 125 and an anode 130 a of theOLED 130. This transistor 124 functions as a second switching transistorthat controls the electrical connection between the drain of thetransistor 121 and the anode of the OLED 130.

The gate of the transistor 125 is electrically connected to the controlline 145, and the control signal Gorst(i) is supplied thereto. Inaddition, the drain of the transistor 125 is electrically connected tothe feed line 16 of the (3j−2)^(th) column and keeps the reset potentialVorst. This transistor 125 functions as a third switching transistorthat controls the electrical connection between the feed line 16 and theanode 130 a of the OLED 130.

Since the display panel 2 in the embodiment is formed on a siliconsubstrate, the substrate potentials of the transistors 121 to 125 areset as the potential Vel.

Additionally, the abovementioned sources and drains of the transistors121 to 125 may be exchanged depending on the channel type and therelationship of the potentials of the transistors 121 to 125. Inaddition, the transistors may be thin film transistors or electric fieldeffect transistors.

The first electrode of the storage capacity 132 is electricallyconnected to the gate of the transistor 121 and the second electrodethereof is electrically connected to the feed line 116. Therefore, thestorage capacity 132 functions as a first storage capacity that storesthe voltage between the gate and the source of the transistor 121.Additionally, the capacitance value of the storage capacity 132 is givenas Cpix. At this time, the capacitance value Cdt of the storage capacity50, the capacitance value Crf1 of the storage capacity 44 and thecapacitance value Cpix of the storage capacity 132 are set so as tosatisfyCdt>Crf1>>Cpix.That is, the capacitance values are set so that Cdt is greater thanCrf1, and Cpix is sufficiently smaller than Cdt and Crf1. Additionally,as the storage capacity 132, a capacity that leeches to the gate node gof the transistor 121 may be used or a capacity that is formed bysandwiching an insulating layer between mutually different conductivelayers on a silicon substrate, may be used.

The anode 130 a of the OLED 130 is a pixel electrode that isindividually provided for each pixel circuit 110. In contrast to this, acathode of the OLED 130 is a common electrode 118 that is commonlyprovided to span all of the pixel circuits 110, and keeps a potentialVct, which is on the low side of a power supply in the pixel circuit110. The OLED 130 is an element in which a white organic EL layer issandwiched between the anode 130 a and a light transmissive cathode onthe abovementioned silicon base. Further, color filters that correspondto one of RGB are overlapped on the outgoing side (cathode side) of theOLED 130.

In this type of OLED 130, when a current flows from the anode 130 a tothe cathode, holes injected from the anode 130 a and electrons injectedfrom the cathode recombine in the organic EL layer, generate excitonsand white light is created. The white light created at this time isconfigured to pass through the cathode on the opposite side from thesilicon substrate (anode 130 a) and be visible on an observer's sideafter undergoing coloration by the color filters.

Next, the configuration of a pixel circuit 110 will be described withreference to FIGS. 5 and 6 .

FIG. 5 is a plan view that shows the configuration of the pixel circuit110 of row i, column (3j−2). This FIG. 5 shows the wiring structure in acase in which a pixel circuit 110 with a top emission structure isviewed in plan view from the observation side thereof, but in order tosimplify the view, the structures formed in areas other than the anode130 a of the OLED 130 have been omitted. In addition, FIG. 6 is apartial cross-sectional view that has been cut at line VI-VI in FIG. 5 .In FIG. 6 , the area up to the anode 130 a of the OLED 130 is shown andother structures have been omitted. Additionally, in FIGS. 5 and 6 ,there are cases in which each layer, each member, each region and thelike are shown at different scales in order to show the foregoing atrecognizable sizes.

As shown in FIG. 6 , each component that configures the pixel circuit110 is formed on a silicon substrate 150. In the embodiment, a P-typesemiconductor substrate is used as the silicon substrate 150. An N well160 is formed across almost the entire surface of the silicon substrate150. Additionally, in FIG. 5 , in order to easily understand the regionsin which the transistors 121 to 125 are provided when viewed in planview, among the N well 160, only the regions in which the transistors121 to 125 are provided and the vicinities thereof are shown withhatching.

The potential Vel is supplied to the N well 160 through an N-typediffusion layer (not shown). Therefore, the substrate potentials of thetransistors 121 to 125 are the potential Vel.

As shown in FIGS. 5 and 6 , a plurality of P-type diffusion layers areformed on the surface of the N well 160 as a result of doping with ions.More specifically, 9 P-type diffusion layers P1 to P9 are formed on thesurface of the N well 160 for each pixel circuit 110. These P-typediffusion layers P1 to P9 function as the sources and the drains of thetransistors 121 to 125. In addition, gate insulation layers L0 areformed on the surfaces of the N well 160 and the P-type diffusion layersP1 to P9, and gate electrodes G1 to G5 are formed on the surfaces of thegate insulation layers L0 using patterning. These gate electrodes G1 toG5 function as the gates of the transistors 121 to 125.

As shown in FIG. 5 , the transistor 121 has the gate electrode G1, theP-type diffusion layer P1 and the P-type diffusion layer P2. Amongthese, the P-type diffusion layer P1 functions as the source of thetransistor 121 and the P-type diffusion layer P2 functions as the drainof the transistor 121.

In addition, the transistor 122 has the gate electrode G2, the P-typediffusion layer P3 and the P-type diffusion layer P4. Among these, theP-type diffusion layer P3 functions as either one of the source and thedrain of the transistor 122 and the P-type diffusion layer P4 functionsas the other one of the source and the drain of the transistor 122.

The transistor 123 has the gate electrode G3, the P-type diffusion layerP4 and the P-type diffusion layer P5. Among these, the P-type diffusionlayer P4 functions as either one of the source and the drain of thetransistor 123 and the P-type diffusion layer P5 functions as the otherone of the source and the drain of the transistor 123. That is, theP-type diffusion layer P4 functions as either one of the source and thedrain of the transistor 123 in addition to functioning as the other oneof the source and the drain of the transistor 122.

The transistor 124 has the gate electrode G4, the P-type diffusion layerP6 and the P-type diffusion layer P7. Among these, the P-type diffusionlayer P6 functions as the source of the transistor 124 and the P-typediffusion layer P7 functions as the drain of the transistor 124.

Additionally, in the embodiment, the drain of the transistor 121, theother one of the source and the drain of the transistor 123 and thesource of the transistor 124 are respectively configured by theindividual P-type diffusion layers P2, P5 and P6, but may be configuredby a single P-type diffusion layer. In such a case, it is not necessaryto provide a relay node N13 that will be described later.

The transistor 125 has the gate electrode G5, the P-type diffusion layerP8 and the P-type diffusion layer P9. Among these, the P-type diffusionlayer P8 functions as the source of the transistor 125 and the P-typediffusion layer P9 functions as the drain of the transistor 125.

As shown in FIG. 6 , a first interlayer insulation layer L1 is formed tocover the gate electrodes G1 to G5 and the gate insulation layers L0.

In addition to a scanning line 12, a feed line 116 and control lines 143to 145 being respectively formed on the surface of the first interlayerinsulation layer L1 for each row through patterning of a conductivewiring layer made of aluminum or the like, relay nodes N11 to N16 and abranched section 116 a are respectively formed thereon for each pixelcircuit 110. Additionally, there are cases in which these wiring layersthat are formed on the surface of the first interlayer insulation layerL1 are referred to as a first wiring layer.

As shown in FIG. 5 , the feed line 116 has a section (the branchedsection 116 a) that is branched in the Y direction for each pixelcircuit 110 in addition to extending in X direction that intersects theY direction. The branched section 116 a is provided so that a portion ofthe branched section 116 a and the P-type diffusion layer P1 mutuallyoverlap each other when viewed in plan view (that is, when the pixelcircuit 110 is viewed from a direction that is perpendicular to asurface of the silicon substrate 150 on which the pixel circuit 110 isformed). In addition, as shown in FIGS. 5 and 6 , the branched section116 a electrically connected to the P-type diffusion layer P1 through acontact hole Ha1 that penetrates the first interlayer insulation layerL1. Additionally, in FIG. 5 , the contact hole is shown with portions inwhich heterogeneous wiring layers overlap as portions with an “x” symbolon a “□” symbol.

As shown in FIG. 5 , the scanning line 12 is provided to intersect thegate electrode G1 and the gate electrode G2 when viewed in plan view inaddition to extending in the X direction. That is, when viewed in planview, at least a portion of the scanning line 12 and at least a portionof the gate electrode G1 overlap. In addition, the scanning line 12 iselectrically connected to the gate electrode G2 through a contact holeHa5.

The control line 143 is provided to intersect the gate electrode G1 andthe gate electrode G3 when viewed in plan view in addition to extendingin the X direction. In addition, the control line 143 is electricallyconnected to the gate electrode G3 through a contact hole Ha7.

The control line 144 is provided to intersect the gate electrode G4 whenviewed in plan view in addition to extending in the X direction, and iselectrically connected to the gate electrode G4 through a contact holeHa10. The control line 145 is provided to intersect the gate electrodeG5 when viewed in plan view in addition to extending in the X direction,and is electrically connected to the gate electrode G5 through a contacthole Ha14.

As shown in FIGS. 5 and 6 , the relay node N11 is electrically connectedto the P-type diffusion layer P4 through a contact hole Ha6 in additionto being electrically connected to the gate electrode G1 through acontact hole Ha2. That is the relay node N11 corresponds to a gate nodeg that is electrically connected to the gate of the transistor 121, theother one of the source and the drain of the transistor 122 and eitherone of the source and the drain of the transistor 123.

The relay node N16 is provided so that the relay node N16 and a portionof the gate electrode G1 mutually overlap when viewed in plan view.Further, the storage capacity 132 is formed by first interlayerinsulation layer L1 being sandwiched by the relay node N16 and the gateelectrode G1. That is, the gate electrode G1 corresponds to the firstelectrode of the storage capacity 132, and the relay node N16corresponds to the second electrode of the storage capacity 132.

The relay node N12 is electrically connected to the P-type diffusionlayer P3 through a contact hole Ha4. The relay node N13 is electricallyconnected to the P-type diffusion layer P5 through a contact hole Ha8and electrically connected to the P-type diffusion layer P6 through acontact hole Ha9 in addition to being electrically connected to theP-type diffusion layer P2 through a contact hole Ha3. The relay node N14is electrically connected to the P-type diffusion layer P8 through acontact hole Ha12 in addition to being electrically connected to theP-type diffusion layer P7 through a contact hole Ha11. The relay nodeN15 is electrically connected to the P-type diffusion layer P9 through acontact hole Ha13.

As shown in FIG. 6 , a second interlayer insulation layer L2 is formedto cover the first wiring layer and the first interlayer insulationlayer L1.

In addition to a data line 14 and a feed line 16 being respectivelyformed on the surface of the second interlayer insulation layer L2 foreach column through patterning of a conductive wiring layer made ofaluminum or the like, relay nodes N21 and N22 are respectively formedthereon for each pixel circuit 110. Additionally, there are cases inwhich these wiring layers that are formed on the surface of the secondinterlayer insulation layer L2 are referred to as a second wiring layer.

As shown in FIG. 5 , the data line 14 is electrically connected to therelay node N12 through a contact hole Hb2. According to thisconfiguration, the P-type diffusion layer P3 is electrically connectedto the data line 14 through the relay node N12. The feed line 16 iselectrically connected to the relay node N15 through a contact hole Hb3.According to this configuration, the P-type diffusion layer P9 iselectrically connected to the feed line 16 through the relay node N15.The relay node N21 is electrically connected to the relay node N16 (thesecond electrode of the storage capacity 132) through a contact hole Hb4in addition to being electrically connected to the feed line 116 througha contact hole Hb1. According to this configuration, the relay node N16is electrically connected to the feed line 116 through the relay nodeN21 and keeps the potential Vel.

In addition, as shown in FIG. 6 , the relay node N22 is electricallyconnected to the relay node N14 through a contact hole Hb5.

As shown in FIG. 6 , a third interlayer insulation layer L3 is formed tocover the second wiring layer and the second interlayer insulation layerL2. The anode 130 a of the OLED 130 is formed on the surface of thethird interlayer insulation layer L3 through patterning of a conductivewiring layer made of aluminum, ITO (Indium Tin Oxide) or the like. Theanode 130 a of the OLED 130 is an individual pixel electrode for eachpixel circuit 110, and is connected to the relay node N22 through acontact hole Hc1 that penetrates the third interlayer insulation layerL3. That is, the anode 130 a of the OLED 130 is electrically connectedto the P-type diffusion layer P7 (that is, the drain of the transistor124) and the P-type diffusion layer P8 (that is, the source of thetransistor 125) through the relay node N22 and the relay node N14.

In addition, although not shown in the drawing, a light-emitting layerformed from an organic EL material that is divided for each pixelcircuit 110 is laminated on the anode 130 a of the OLED 130. Further, acathode (common electrode 118), which is a common transparent electrodethat spans all of the plurality of pixel circuits 110, is provided onthe light-emitting layer. That is, the OLED 130 emits light at abrightness that depends on a current that flows from the anode towardthe common electrode 118 by sandwiching the light-emitting layer with ananode and a cathode that face one another. Among the light that the OLED130 emits, the light that is emitted toward the direction opposite thesilicon substrate 150 (that is, the upward direction in FIG. 6 ) isvisible by an observer as a picture (top emission structure). Inaddition to this, a sealing material or the like for shielding thelight-emitting layer from the atmosphere is provided, but thedescription thereof has been omitted.

Operations of the Embodiment

The operation of the electro-optical device 1 will be described withreference to FIG. 7 . FIG. 7 is a timing chart for describing theoperations of each section in the electro-optical device 1. As shown inthis drawing, the scanning line drive circuit 20 scans the 1^(st) tom^(th) scanning lines 12 in order in the period of 1 frame for eachhorizontal scanning period (h) by sequentially switching the scanningsignals Gwr(1) to Gwr(m) to an L level. The operation in a singlehorizontal scanning period (h) common across each row of pixel circuits110. Considering this, hereinafter, the operation will be describedfocusing on a scanning period in which the i^(th) row, in particular,the pixel circuit 110 of row i, column (3j−2) is horizontally scanned.

In the embodiment, the scanning period of the i^(th) row is separatedinto an initialization period that is shown as (b) in FIG. 7 , acompensation period that is shown as (c), and a write-in period that isshown as (d). Further, after the write-in period of (d), there is alight emission period shown as (a) and after the period of one frame haspassed, there is another scanning period of the i^(th) row. Therefore,if considered in chronological order, the scanning period is arepetition of the cycle (light emission period)→initializationperiod→compensation period→write-in period→(light emission period).

Additionally, in FIG. 7 , each of the scanning signal Gwr(i−1) andcontrol signals Gel(i−1), Gcmp(i−1) and Gorst(i−1) that correspond tothe (i−1)^(th) row that is one row before the i^(th) row forms a waveprofile in which the foregoing respectively precede the scanning signalGwr(i) and control signals Gel(i), Gcmp(i) and Gorst(i) that correspondto the i^(th) row by a single horizontal scanning period (h) in terms oftime.

Light Emission Period

For convenience of description, the light emission period will bedescribed from the light emission period that comes before theinitialization period. In the light emission period of the i^(th) row,the scanning line drive circuit 20 supplies a predetermined secondpotential V2 to the scanning line 12 of the i^(th) row, supplies apredetermined first potential V1 to the control line 144 of the i^(th)row, supplies the second potential V2 to the control line 143 of thei^(th) row and supplies the second potential V2 to the control line 145of the i^(th) row. Additionally, in the embodiment, the first potentialV1 is set to be lower than the second potential V2. For example, thefirst potential V1 may be a potential that corresponds to an L level ofthe control signal (control signal Gref and the like) that the controlcircuit 3 supplies, and the second potential V2 may be a potential thatcorresponds to an H level of the control signal that the control circuit3 supplies. That is, as shown in FIG. 7 , in the light emission periodof the i^(th) row, the scanning signal Gwr(i) is set to an H level, thecontrol signal Gel(i) is set to an L level, the control signal Gcmp(i)is set to an H level and the control signal Gorst(i) is set to an Hlevel.

Therefore, as shown in FIG. 8 , in the pixel circuit 110 of row i,column (3j−2), the transistor 124 is turned on, and the transistors 122,123 and 125 are turned off. Therefore, the transistor 121 supplies acurrent Ids that depends on a voltage Vgs between the gate and thesource thereof to the OLED 130. As will be described later, in theembodiment, the voltage Vgs of the light emission period is alevel-shifted value of the potential of the data signal. Therefore, acurrent that depends on gradation level is supplied to the OLED 130 in astate in which the threshold voltage of the transistor 121 has beencompensated for.

Additionally, since the light emission period of the i^(th) row is aperiod in which rows other than the i^(th) row are horizontally scanned,the potential of the data line 14 fluctuates as appropriate. However,since the transistor 122 in the pixel circuit 110 of the i^(th) row isturned off, fluctuations in the potential of the data line 14 are nottaken into consideration in this case. In addition, in FIG. 8 , apathway that is important in the description of the operations in thelight emission period is shown with a thick line.

Initialization Period

Next, at the start of the scanning period of the i^(th) row, firstly,the initialization period of (b) is started as a first period. In theinitialization period of the i^(th) row, as shown in FIG. 7 , thescanning line drive circuit 20 supplies the second potential V2 to thescanning line 12 of the i^(th) row and sets the scanning signal Gwr(i)to an H level, supplies the second potential V2 to the control line 144of the i^(th) row and sets the control signal Gel(i) to an H level,supplies the second potential V2 to the control line 143 of the i^(th)row and sets the control signal Gcmp(i) to an H level, and supplies thefirst potential V1 to the control line 145 of the i^(th) row and setsthe control signal Gorst(i) to an L level. Therefore, in the pixelcircuit 110 of row i, column (3j−2), the transistor 124 is turned offand the transistor 125 is turned on. As a result, the anode 130 a of theOLED 130 is set as a reset potential Vorst in addition to the pathway ofthe current that is supplied to the OLED 130 being blocked.

Since the OLED 130 has a configuration in which, as described above, anorganic EL layer is sandwiched between the anode 130 a and the cathode,a capacity is leeched in parallel between the anode and the cathode.When a current flows to the OLED 130 in the light emission period, thevoltages of both ends between the anode and the cathode of the OLED 130are stored by the capacity that is leeched in parallel between the anodeand the cathode, but this stored voltage is reset by the transistor 125being turned on. Therefore, in the embodiment, when another currentflows to the OLED 130 in a subsequent light emission period, it isunlikely that the voltage stored by the capacity that is leeched inparallel between the anode and the cathode will have an effect.

In more detail, for example, when the display state is switched from ahigh brightness to a low brightness, since the high voltage from whenthe brightness is high (a large current flows) is stored if aconfiguration which does not reset is used, even if an attempt to flow asmall current is made subsequently, an excess current flows, and it isno longer possible to display at a low brightness. In contrast to this,in the embodiment, since the potential of the anode 130 a of the OLED130 is reset as a result of the transistor 125 being turned on, it ispossible to improve the reproducibility of the low brightness side.Additionally, in the embodiment, the reset potential Vorst is set sothat the difference between the reset potential Vorst and a potentialVct of the common electrode 118 falls below the light emission thresholdvoltage of the OLED 130. Therefore, in the initialization period (thecompensation period and the write-in period that will be explained next)the OLED 130 is in an off (non-emission) state.

Meanwhile, in the initialization period of the i^(th) row, as shown inFIG. 7 , the control circuit 3 respectively sets the control signal/Gini to an L level, the control signal Gref to an H level and thecontrol signal Gcpl to an L level. Therefore, the transistor 43 and thetransistor 45 are in on states. According to this configuration, thefirst electrode of the storage capacity 44 and the feed line 61 areelectrically connected, and the first electrode of the storage capacity44 (and the data line 14) is initialized to the initial potential Vini.In addition, the second electrode of the storage capacity 44 and thefeed line 62 are electrically connected, and the second electrode of thestorage capacity 44 (and the node h1) is initialized to the referencepotential Vref.

The initial potential Vini in the embodiment is set so that (Vel−Vini)is greater than the threshold voltage of the transistor 121 |Vth|.Additionally, since the transistor 121 is a P-channel type, thethreshold voltage Vth that uses the potential of the source as areference is negative. Therefore, in order to prevent confusion in theexplanation of the high and low relationship, the threshold voltage isexpressed using an absolute value of |Vth|, and defined using a largeand small relationship.

As shown in FIG. 7 , the data signal supply circuit 70 respectivelysupplies the data signals Vd(1), Vd(2), . . . , Vd(n) to eachdemultiplexer DM(1), DM(2), . . . , DM(n) in a period from after thestart of the scanning period of the i^(th) row to the start of thewrite-in period. That is, in terms of the j^(th) group, the data signalsupply circuit 70 switches the data signal Vd(j) to a potential thatdepends on the gradation level of the pixels of row i, column (3j−2),row i, column (3j−1) and row i, column (3j) in order.

Meanwhile, control circuit 3 exclusively sets the control signalsSel(1), Sel(2) and Sel(3) to an H level in order in conformity with theswitch in potential of the data signal. According to this configuration,the three transmission gates 34 provided in each demultiplexer DM arerespectively turned on in order from the left end column, the centralcolumn and the right end column.

In this case, in a case in which the transmission gate 34 of the leftend column that belongs to the j^(th) group is turned on by the controlsignal Sel(1) in the initialization period, since the data signal Vd(j)is supplied to the first electrode of the storage capacity 41, the datasignal Vd(j) is stored by the storage capacity 41.

Compensation Period

Next, in the scanning period of the i^(th) row, the compensation periodof (c) is performed as the second period. In the compensation period ofthe i^(th) row, as shown in FIG. 7 , the control circuit 3 respectivelysets the control signal /Gini to an H level, the control signal Gref toan H level and the control signal Gcpl to an L level. Therefore, whilethe transistor 43 is turned into an on state, the transistor 45 isturned into an off state. According to this configuration, the secondelectrode of the storage capacity 44 and the feed line 62 areelectrically connected, and the node h1 is set as the referencepotential Vref.

In addition, in the compensation period, in a case in which thetransmission gate 34 of the left end column that belongs to the j^(th)group is turned on by the control signal Sel(1) in the compensationperiod, the data signal Vd(j) is supplied to the first electrode of thestorage capacity 41.

Additionally, in a case in which the transmission gate 34 of the leftend column that belongs to the j^(th) group has already been turned onby the control signal Sel(1) in the initialization period, thetransmission gate 34 does not turn on, but the data signal Vd(j) thatwas supplied when the transmission gate 34 of the left end column wasturned on is stored by the storage capacity 41.

In addition, in the compensation period of the i^(th) row, as shown inFIG. 7 , the scanning line drive circuit 20 supplies the first potentialV1 to the scanning line 12 of the i^(th) row and sets the scanningsignal Gwr(i) to an L level, supplies the second potential V2 to thecontrol line 144 of the i^(th) row and sets the control signal Gel(i) toan H level, supplies the first potential V1 to the control line 143 ofthe i^(th) row and sets the control signal Gcmp(i) to an L level, andsupplies the first potential V1 to the control line 145 of the i^(th)row and sets the control signal Gorst(i) to an L level. Therefore, sincethe transistor 123 is turned on, the transistor 121 becomes a diodeconnection. According to this configuration, a drain current flows tothe transistor 121, and the gate node g and data line 14 are charged. Inmore detail, the current flows along a pathway from the feed line116→the transistor 121→the transistor 123→the transistor 122→the dataline 14 of the (3j−2)^(th) column. Therefore, the data line 14 and thegate node g that are in a mutually connected state as a result of thetransistor 121 being turned on rise from the initial potential Vini.However, since the current that flows along the abovementioned pathwayflows less easily as the gate node g approaches the potential(Vel−|Vth|), the data line 14 and the gate node g are saturated with thepotential (Vel−|Vth|) until the end of the compensation period isreached.

Therefore, the storage capacity 132 stores the threshold voltage |Vth|of the transistor 121 at the end of the compensation period.Additionally, hereinafter, there are cases in which the potential(Vel−|Vth|) is given as potential Vp.

When the compensation period finishes, the scanning line drive circuit20 updates the control signal Gcmp(i) from an L level to an H level byswitching the potential that is supplied to the control signal 143 fromthe first potential V1 to the second potential V2. According to thisconfiguration, the diode connection of the transistor 121 is removed.

Additionally, the scanning line drive circuit 20 switches the potentialthat is supplied to the control line 143 so as to make the waveform whenthe control signal Gcmp(i) is changed from an L level to an H levelgradual in comparison with the change from an H level to an L level.That is, as shown in FIG. 7 , the scanning line drive circuit 20 setsthe period in which the potential that is supplied to the control line143 is switched from the second potential V2 to the first potential V1as a third switching period T3, and sets the period in which thepotential is switched from the first potential V1 to the secondpotential V2 as a fourth switching period T4. At this time, the scanningline drive circuit 20 changes the potential that is supplied to thecontrol line 143 so that the duration of the fourth switching period T4is sufficiently long in comparison with the duration of the thirdswitching period T3.

As described above, the control line 143 and the gate electrode G1 (thegate of the transistor 121) intersect when viewed in plan view.Therefore, there is a parasitic capacity between the control line 143and the gate electrode G1. Accordingly, in a hypothetical case in whichthe duration of the fourth switching period T4 is shortened to be thesame as the third switching period T3, and the control signal Gcmp(i) israpidly raised from an L level to an H level, the effect of thehigh-frequency component of the control signal Gcmp(i) in the controlline 143 is received, and the potential of the gate electrode G1 ischanged.

This will be described in more detail later, but the potential of thegate node g (the potential of the gate electrode G1) at the end of thecompensation period is established as a potential in which the variationin the threshold voltage of the transistor 121 for each pixel circuit110 has been compensated for. However, in a case in which the potentialof the gate node g is changed after the end of the compensation period,since it is no longer possible to compensate for the variation in thethreshold voltage for each pixel circuit 110, a problem in which displayunevenness such as the impairment of display screen uniformity becomemore pronounced.

In contrast to this, in the embodiment, the duration of the fourthswitching period T4 is made to be sufficiently longer than the durationof the third switching period T3, and propagation of the fluctuation inpotential of the control line 143 to the gate node g (gate electrode G1)is prevented by making the waveform when the control signal Gcmp(i)changes from an L level to an H level a gradual waveform. According tothis configuration, the variation in the threshold voltage of each pixelcircuit 110 can be compensated for, and a high integrity display inwhich evenness in the display is secured is possible.

Additionally, the duration of the third switching period T3 iseffectively sufficiently short so that it is possible to consider theforegoing as “0”. That is, the waveform when the control signal Gcmp(i)is lowered from an H level to an L level, may be, for example, awaveform that is equivalent to the waveform when the control signal Grefis lowered from an H level to an L level. However, in FIG. 7 , forconvenience of description, in order to show the third switching periodT3, the waveform of the rise in the control signal Gcmp(i) is recordedas a gradual waveform in comparison with the effective waveform thereof.

In addition, once the compensation period has finished, since thecontrol circuit 3 updates the control signal Gref from an H level to anL level, the transistor 43 is turned off. Therefore, although thepathway to the gate node g in the pixel circuits 110 from the(3j−2)^(th) row of the data line 14 to row i, column (3j−2) becomes afloating state, the potential of the pathway is preserved at (Vel−|Vth|)by the storage capacities 50 and 132.

Write-In Period

After the initialization period, the write-in period of (d) is performedas the third period. As shown in FIG. 7 , in the write-in period of thei^(th) row, the scanning line drive circuit 20 supplies the firstpotential V1 to the scanning line 12 of the i^(th) row and sets thescanning signal Gwr(i) to an L level, supplies the second potential V2to the control line 144 of the i^(th) row and sets the control signalGel(i) to an H level, supplies the second potential V2 to the controlline 143 of the i^(th) row and sets the control signal Gcmp(i) to an Hlevel, and supplies the first potential V1 to the control line 145 ofthe i^(th) row and sets the control signal Gorst(i) to an L level.According to this configuration, the diode connection of the transistor121 is removed.

In addition, as shown in FIG. 7 , in the write-in period of the i^(th)row, the control circuit 3 respectively sets the control signal /Gini toan H level, the control signal Gref to an L level and the control signalGcpl to an H level. Therefore, since the transistor 42 is turned on, thedata signal Vd(j) that was stored in the storage capacity 41 is suppliedto the second electrode of the storage capacity 44 through the node h1.According to this configuration, the node h1 and the second electrode ofthe storage capacity 44 are changed from the reference potential Vref inthe compensation period. The amount of the change in potential of thenode h1 at this time is expressed as ΔVh. In addition, there are casesin which the potential of the node h1 in the write-in period (Vref+ΔVh)is expressed as a potential Vh.

Additionally, in a case in which the potential of the node h1 is changedfrom the reference potential Vref to the potential Vh by ΔVh only, thepotentials of the gate node g and the data line 14 also change from thepotential Vp=(Vel−|Vth|) set in the compensation period. The amount ofthe change in potential of the gate node g at this time is expressed asΔVg. In addition, there are cases in which the potential of the gatenode g in the write-in period (Vp+ΔVg) is expressed as a potentialVgate.

Hereinafter, the changes in the potentials of the gate node g and thenode h1 before and after the start of the write-in period will bedescribed while referring to FIGS. 9A and 9B.

FIG. 9A is an explanatory view for describing the changes in thepotentials of the node h1 and the gate node g before and after the startof the write-in period. In the drawing, (A-1) represents the potentialsof the node h1 and the gate node g before the start of the write-inperiod, and (A-2) represents the potentials of the node h1 and the gatenode g after the start of the write-in period (that is, after thetransmission gate 42 has been turned on). Additionally, in thecompensation period and the write-in period, since the storage capacity50 and the storage capacity 132 are electrically connected in parallel,the capacitance value C0 of a combined capacity 501 of the storagecapacity 50 and the storage capacity 132 is expressed by the followingequation (1).C0=Cpix+Cdt  (1)

If the charge that is accumulated in the combined capacity 501 beforethe start of the write-in period is set as Q0 a and the charge that isaccumulated in the combined capacity 501 after the start of the write-inperiod is set as Q0 b, the charge that flows out from the combinedcapacity 501 before and after the start of the write-in period (Q0 a−Q0b) is expressed by the following equation (2). In the same manner, ifthe charge that is accumulated in the storage capacity 44 before thestart of the write-in period is set as Q1 a and the charge that isaccumulated in the storage capacity 44 after the start of the write-inperiod is set as Q1 b, the charge that flows into the storage capacity44 before and after the start of the write-in period (Q1 b−Q1 a) isexpressed by the following equation (3). Since the charge that flows outof the combined capacity 501 before and after the start of the write-inperiod and the charge that flows into the storage capacity 44 before andafter the start of the write-in period are equal, the following equation(4) is established.Q0a−Q0b=C0*(Vp−Vgate)  (2)Q1b−Q1a=Crf1*{(Vgate−Vh)−(Vp−Vref)}  (3)Q0a−Q0b=Q1b−Q1a  (4)

It is possible to calculate the potential Vgate of the gate node g inthe write-in period using equation (2) to equation (4). Morespecifically, the potential Vgate is expressed by the following equation(5).Vgate={Crf1/(Crf1+C0)}*{Vh−Vref}+Vp  (5)

In this case, a capacity ratio k1 shown in the following equation (6) isintroduced. At this time, using the capacity ratio k1, it is possible toexpress the potential Vgate of the gate node g in the write-in periodwith the following equation (7), and using the capacity ratio k1, it ispossible to express the amount of the change in potential ΔVg of thegate node g before and after the write-in period with the followingequation (8).k1=Crf1/(Crf1+Cdt+Cpix)  (6)Vgate=k1*(Vh−Vref)+Vp=k1*ΔVh+Vp  (7)ΔVg=Vgate−Vp=k1*ΔVh  (8)

In this manner the potential of the gate node g in the write-in periodchanges from a potential Vp=(Vel−|Vth|) in the compensation period to apotential Vgate=(Vel−|Vth|+k1+ΔVh) which is shifted in the upwarddirection by the product of the amount of the change in potential of thenode h1 ΔVh and the capacity ratio k1 (k1*ΔVh). At this time, as shownin the following equation (9), the absolute value |Vgs| of the voltageVgs of the transistor 121 becomes a value from which the rise inpotential of the gate node g from the threshold voltage |Vth| thereofhas been subtracted.|Vgs|=|Vth|−k1*ΔVh  (9)

FIG. 9B is an explanatory view for describing the changes in thepotentials of the node h1 and the gate node h2 before and after thestart of the write-in period. In the drawing, (B-1) represents thepotentials of the node h1 and the node h2 before the start of thewrite-in period, and (B-2) represents the potentials of the node h1 andthe node h2 after the start of the write-in period (that is, after thetransmission gate 42 has been turned on). Additionally, in thecompensation period and the write-in period, since the combined capacity501 of the storage capacity 50 and the storage capacity 132 and thestorage capacity 41 are electrically connected in series, thecapacitance value C1 of a combined capacity 502 of the storage capacity50, the storage capacity 132 and the storage capacity 44 is expressed bythe following equation (10).C1=(C0*Crf1)/(C0+Crf1)  (10)

If the charge that is accumulated in the combined capacity 502 beforethe start of the write-in period is set as Q1 c and the charge that isaccumulated in the combined capacity 502 after the start of the write-inperiod is set as Q1 d, the charge that flows out from the combinedcapacity 502 before and after the start of the write-in period (Q1 c−Q1d) is expressed by the following equation (11). In the same manner, ifthe charge that is accumulated in the storage capacity 41 before thestart of the write-in period is set as Q2 c and the charge that isaccumulated in the storage capacity 41 after the start of the write-inperiod is set as Q2 d, the charge that flows into the storage capacity41 before and after the start of the write-in period (Q2 d−Q2 c) isexpressed by the following equation (12). Since the charge that flowsout of the combined capacity 502 before and after the start of thewrite-in period and the charge that flows into the storage capacity 41before and after the start of the write-in period are equal, thefollowing equation (13) is established.Q1c−Q1d=C1*(Vref−Vh)  (11)Q2d−Q2c=Crf2*{Vh−Vd(j)}  (12)Q1c−Q1d=Q2d−Q2c  (13)

Therefore, it is possible to calculate the potential Vh of the node h1in the write-in period using equation (11) to equation (13). Morespecifically, the potential Vh is expressed by the following equation(14). In addition, the amount of the change in potential in the node h1ΔVh is expressed by the following equation (15).Vh={C1/(C1+Crf2)}*(Vref)+{Crf2/(C1+Crf2)}*{Vd(j)}  (14)ΔVh=Vh−Vref={Crf2/(C1+Crf2)}*{Vd(j)−Vref}  (15)

In this case, if a capacity ratio k2 shown in the following equation(16) is introduced, the amount of the change in potential ΔVh can alsobe expressed by the following equation (17).k2=Crf2/(C1+Crf2)  (16)ΔVh=k2*{Vd(j)−Vref}  (17)

By substituting the equation (17) into the equation (7), it is possibleto express the potential Vgate of the gate node g in the write-in periodusing the following equation (18). Accordingly, it is possible toexpress the amount of the change in potential ΔVg of the gate electrodeG before and after the start of the write-in period using the followingequation (19).Vgate=k1*k2*{Vd(j)−Vref}+Vp  (18)ΔVg=k1*k2*{Vd(j)−Vref}  (19)

In this manner, the potential of the node h1 is shifted from a potentialthat shows the data signal Vd(j) by the reference potential Vref, andthe resulting potential is changed by a value ΔVh that is compressed bythe capacity ratio k2. According to this configuration, the potentialVgate of the gate node g is changed by a value in which the amount ofchange in the potential of the node h1 ΔVh has been further compressedby the capacity ratio k1. That is, as shown in equation (18), in thewrite-in period, the potential Vgate of the gate node g is shifted fromthe data signal Vd(j) by the reference potential Vref, and a potentialthat is compressed by the multiplying the shifted potential by thecapacity ratio k3=k2*k1, which is established on the basis of thecapacitance values Cdt, Crf1, Crf2 and Cpix, is supplied.

FIG. 10 is a view that shows the relationship between the potential ofthe data signal Vd(j) and the potential Vgate of the gate node g in thewrite-in period. As described above, the range of the potential of thedata signal Vd(j) that is created on the basis of the image signal Vidsupplied from the control circuit 3 can be from a minimum value Vmin toa maximum value Vmax that depend on the gradation level of the pixels.Further, as described above, the data signal Vd(j) is shifted by thereference potential Vref, and the potential Vgate that has beencompressed by the capacity ratio k3 is written into the gate node g. Atthis time, as shown in the following equation (20), the range of thepotential ΔVgate of the gate node g is compressed by the product of therange of the potential ΔVdata (=Vmax−Vmin) of the data signal and thecapacity ratio k3.ΔVgate=k3*ΔVdata  (20)

In addition, as is clear from equation (18), it is possible to establishthe direction and extent of the shift of the range of the potentialΔVgate of the gate node g in contrast with the range of the potentialΔVdata of the data signal on the basis of the potential Vp (=Vel−|Vth|)and the reference potential Vref.

After the write-in period has finished, the scanning line drive circuit20 updates the scanning signal Gwr(i) from an L level to an H level byswitching the potential that is supplied to the scanning line 12 fromthe first potential V1 to the second potential V2. According to thisconfiguration, since the transistor 122 is turned off, the potential ofthe gate node g is preserved as potentialVgate=[{Vel−|Vth|}+k3·{Vd(j)−Vref}].

Additionally, the scanning line drive circuit 20 switches the potentialthat is supplied to the scanning line 12 so as to make the waveform whenthe scanning signal Gwr(i) is changed from an L level to an H levelgradual in comparison with the change from an H level to an L level.That is, as shown in FIG. 7 , the scanning line drive circuit 20 setsthe period in which the potential that is supplied to the scanning line12 is switched from the second potential V2 to the first potential V1 asa first switching period T1, and sets the period in which the potentialis switched from the first potential V1 to the second potential V2 as asecond switching period T2. At this time, the scanning line drivecircuit 20 changes the potential that is supplied to the scanning line12 so that the duration of the second switching period T2 issufficiently long in comparison with the duration of the first switchingperiod T1.

As described above, the scanning line 12 and the gate electrode G1 (thegate of the transistor 121) intersect when viewed in plan view.Therefore, there is a parasitic capacity between the scanning line 12and the gate electrode G1. Accordingly, in a hypothetical case in whichthe duration of the second switching period T2 is shortened to be thesame as the first switching period T1, and the scanning signal Gwr(i) israpidly raised from an L level to an H level, the effect of thehigh-frequency component of the scanning signal Gwr(i) in the scanningline 12 is received, and the potential of the gate electrode G1 ischanged.

In the abovementioned manner, at the end of the write-in period, thepotential of the gate node g (the potential of the gate electrode G1) isestablished as the potential Vgate on the basis of the data signal Vd(j)(the image signal Vid) that defines the brightness of the OLED 130.However, in a case in which the potential of the gate node g is changedafter the end of the write-in period, the potential of the gate node gbecomes a potential that is different from the potential Vgate that isestablished on the basis of the data signal Vd(j). In this case, eachpixel displays a gradation that is different from the gradation thedefines the image signal Vid and the display quality is reduced.

In contrast to this, in the embodiment, the duration of the secondswitching period T2 is made to be sufficiently longer than the durationof the first switching period T1, and propagation of the fluctuation inpotential of the scanning line 12 to the gate node g (gate electrode G1)is prevented by making the waveform when the scanning signal Gwr(i)changes from an L level to an H level a gradual waveform. According tothis configuration, it is possible to accurately display each pixel withthe gradation that defines the image signal Vid, and a high integritydisplay is possible.

Additionally, the duration of the first switching period T1 iseffectively sufficiently short so that it is possible to consider theforegoing as “0”. That is, the waveform when the scanning signal Gwr(i)is lowered from an H level to an L level, may be, for example, awaveform that is equivalent to the waveform when the control signal Grefis lowered from an H level to an L level. However, in FIG. 7 , forconvenience of description, in order to show the first switching periodT1, the waveform of the rise in the scanning signal Gwr(i) is recordedas a gradual waveform in comparison with the effective waveform thereof.

Light Emission Period

After the write-in period of the i^(th) row has finished, the lightemission period is started. In the embodiment, after the write-in periodof the i^(th) row has finished, the light emission period is startedafter an interval of 1 horizontal scanning period. In the light emissionperiod, as described above, since the scanning line drive circuit 20sets the scanning signal Gwr(i) to an H level, the transistor 122 isturned off, and the gate node g is preserved at the potentialVgate=[{Vel−|Vth|}+k3·{Vd(j)−Vref}]. In addition, in the light emissionperiod, since the scanning line drive circuit 20 sets the control signalGel(i) to an L level, in the pixel circuit 110 of row i, column (3j−2),the transistor 124 is turned on. Since the voltage Vgs between the gateand the source thereof is [|Vth|−k3·{Vd(j)−Vref}], as shown in earlierFIG. 8 , a current that depends on gradation level is supplied to theOLED 130 in a state in which the threshold voltage of the transistor 121has been compensated for.

In the scanning period of the i^(th) row, in terms of time, this kind ofoperation is also executed in parallel in the pixel circuits 110 of thei^(th) row other than the pixel circuit 110 of the (3j−2)^(th) row.Furthermore, this kind of operation of the i^(th) row is effectivelyrepeated for each frame in addition to being executed in rows 1, 2, 3, .. . , (m−1) and m in order in the period of one frame.

Effects of the Embodiment

According to the embodiment, the scanning line 12 and the control line143 are provided in positions that intersects the gate of the transistor121 (gate electrode G1) when viewed in plan view. Therefore, incomparison with a case in which the scanning line 12 and the controlline 143 are provided not to intersect the gate of the transistor 121,it is possible to wire a plurality of control lines (the scanning line12 and the control lines 143, 144 and 145) that extend in the Xdirection at high density, and control lines with a narrower pitch arepossible. That is, according to the embodiment, by wiring control linesat high density, pixel circuits 110 with a narrower pitch are possible,and as a result of this, a smaller electro-optical device 1 (displaysection 100) and higher definition of display are possible.

According to the embodiment, the scanning line drive circuit 20 changesthe potential that is supplied to the scanning line 12 so as to make thewaveform when the scanning signal Gwr(i) is changed from an L level toan H level gradual in comparison with the change from an H level to an Llevel. According to this configuration, since propagation of thefluctuation in the potential of the scanning signal Gwr(i) to the gateof the transistor 121 is even prevented in a case in which the scanningline 12 and the gate of the transistor 121 intersect when viewed in planview, it is possible to accurately display each pixel with the gradationthat defines the image signal Vid.

According to the embodiment, the scanning line drive circuit 20 changesthe potential that is supplied to the control line 143 so as to make thewaveform when the control signal Gcmp(i) is changed from an L level toan H level gradual in comparison with the change from an H level to an Llevel. According to this configuration, since propagation of thefluctuation in the potential of the control signal Gcmp(i) to the gateof the transistor 121 is even prevented in a case in which the controlline 143 and the gate of the transistor 121 intersect when viewed inplan view, a high integrity display in which evenness in the display issecured is possible.

According to the embodiment, since the range of the potential ΔVgate inthe gate node g is narrowed in contrast with the range of the potentialΔVdata of the data signal, it is even possible to apply a voltage thatreflects gradation level between the gate and the source of thetransistor 121 when the data signal is not recorded with a fine degreeof accuracy. Therefore, it is even possible to control the current thatis supplied to the OLED 130 with a high degree of accuracy in cases inwhich the very small current that flows to the OLED 130 has a relativelylarge change in contrast with the change in the voltage Vgs between thegate and the source of the transistor 121 in the pixel circuit 110.

In addition, as shown by the broken line in FIG. 4 , there are cases inwhich a capacity Cprs is leeched between the data line 14 and the gatenode g in the pixel circuit 110. In this case, if the width of thechange in the potential of the data line 14 is large, the foregoingpropagates to the gate node g through the capacity Cprs, so calledcrosstalk, unevenness or the like occurs and the integrity of thedisplay is reduced. The effect of the capacity Cprs appears notably whenthe pixel circuit 110 is miniaturized.

In contrast to this, in the embodiment, since the range of the change inthe potential of the data line 14 is also narrowed in contrast with therange of the potential of the data signal ΔVdata, it is possible tosuppress the effect through the capacity Cprs.

In addition, according to the embodiment, the effect of the thresholdvoltage in the current Ids that is supplied to the OLED 130 by thetransistor 121 is cancelled out. Therefore, according to the embodiment,since variation is compensated for and a current that depends ongradation level is even supplied to the OLED 130 when there is variationin the threshold voltage of the transistor 121 of each pixel circuit110, a high integrity display is possible as a result of being able tosuppress the occurrence of unevenness such as impairment of displayscreen uniformity.

This cancelling out will be explained with reference to FIG. 11 . Asshown in the drawing, since the transistor 121 controls the very smallcurrent that is supplied to the OLED 130, the foregoing acts on a weakinversion region (a subthreshold region).

In the drawing, A shows a relationship between the gate potential in atransistor in which the threshold voltage |Vth| is large and the currentthat is supplied to the transistor, and B shows a relationship betweenthe gate potential in a transistor in which the threshold voltage |Vth|is small and the current that is supplied to the transistor.Additionally, in FIG. 11 , the voltage Vgs between the gate and thesource is the difference between the solid line and the potential Vel.In addition, in FIG. 11 , the current of the vertical axis is shown as alogarithm in which the direction from the source toward the drain in setas negative (downwards).

In the compensation period, the gate node g becomes the potential(Vel−|Vth|) from the initial potential Vini. Therefore, while theoperating point of the transistor in which the threshold voltage |Vth|is large, which is expressed by solid line A, moves from S to Aa, theoperating point of the transistor in which the threshold voltage |Vth|is small, which is expressed by solid line B, moves from S to Ba.

Next, in a case in which the potentials of the data signals to the pixelcircuit 110 to which the two transistors belong are the same, that is, acase in which the same gradation levels are specified, in the write-inperiod, the amounts of the shifts in potential from the operating pointsAa and Bb are k1*ΔVh that are identical. Therefore, the operating pointof the transistor which is expressed by solid line A moves from Aa toAb, and the operating point of the transistor which is expressed bysolid line B moves from Ba to Bb, but the current in the operating pointafter the shift in potential has an almost identical Ids in bothtransistors.

According to the embodiment, the operation of storing the data signalthat is supplied from the control circuit 3 through the demultiplexer DMin the storage capacity 41 is executed from the initialization period tothe compensation period. That is, according to the embodiment, inaddition to the operation of initializing the potential of the anode 130a to the reset potential Vorst and the operation of storing the datasignal in the storage capacity 41 being executed in parallel in theinitialization period, the operation of compensating for variation inthe threshold voltage of the transistor 121 and the operation of storingthe data signal in the storage capacity 41 are executed in parallel inthe compensation period. Therefore, it is possible to relax therestrictions on time of the operations that are to be executed in asingle horizontal scan period, and it is possible to reduce the speed ofthe supply operation of the data signal in the data signal supplycircuit 70.

MODIFICATION EXAMPLES

The embodiment is not limited to the abovementioned embodiment, and forexample, the various modifications that will be described below arepossible. In addition, it is possible to arbitrarily combine one ormultiple aspects of the modifications that will be described below asappropriate.

Modification Example 1

In the abovementioned embodiment, each pixel circuit 110 had aconfiguration in which the scanning line 12 and the control line 143intersect the gate electrode G1 when viewed in plan view, but aconfiguration in which the control line 144 intersects the gateelectrode G1 in addition to the scanning line 12 and the control line143 may be used.

FIG. 12 is a plan view that shows the configuration of a pixel circuit110 according to modification example 1. Apart from the feature of thecontrol line 144 and the gate electrode G1 intersecting when viewed inplan view and a feature of the control line 144 having a branchedsection 142 a that is branched in the Y direction for each pixel circuit110, the pixel circuit 110 according to modification example 1 isconfigured in the same manner as the pixel circuit 110 according to theembodiment shown in FIG. 5 .

According to this configuration, in comparison with a case in which thecontrol line 144 is provided not to intersect the gate of the transistor121, it is possible to wire the plurality of control lines that extendin the X direction (the scanning line 12 and the control lines 143, 144and 145) at a high density, and control lines with a narrower pitch arepossible. As a result of this, a smaller electro-optical device (displaysection) and higher definition of display are possible.

In addition, in a case in which the control line 144 and the gateelectrode G1 intersect, the scanning line drive circuit 20 may switchthe potential that is supplied to the control line 144 so as to make thewaveform when the control signal Gel(i) is changed from an H level to anL level gradual in comparison with the change from an L level to an Hlevel.

FIG. 13 is a timing chart for describing the operations of anelectro-optical device according to modification example 1. As shown inFIG. 13 , the scanning line drive circuit 20 according to modificationexample 1 changes the potential that is supplied to the control line 144so that the duration of a fifth switching period T5, in which thepotential that is supplied to the control line 144 is switched from thesecond potential V2 to the first potential V1, is sufficiently long incomparison with the duration of a sixth switching period T6, in whichthe potential is switched from the first potential V1 to the secondpotential V2.

As described above, the potential of the gate electrode G1 (the gatenode g of the transistor 121) is established as the potential Vgate thatdefines the brightness of the OLED 130 in the write-in period thatprecedes the fifth switching period T5. Therefore, in a case in whichthe potential of the control line 144 changes rapidly in the fifthswitching period T5 and the fluctuations in potential propagate to thegate electrode G1, it is not possible to accurately display each pixelwith the gradation that defines the image signal Vid.

In contrast to this, the scanning line drive circuit 20 according tomodification example 1 makes the duration of the fifth switching periodT5 sufficiently longer than the duration of the sixth switching periodT6, and prevents propagation of the fluctuation in potential of thecontrol line 144 to the gate node g (gate electrode G1) by making thewaveform when the control signal Gel(i) changes from an H level to an Llevel gradual. According to this configuration, it is possible toaccurately display each pixel with the gradation that defines the imagesignal Vid, and a high integrity display is possible.

Modification Example 2

In the abovementioned embodiment, each pixel circuit 110 had aconfiguration in which the scanning line 12 and the control line 143intersect the gate electrode G1 when viewed in plan view, but aconfiguration in which the control line 145 intersects the gateelectrode G1 in addition to the scanning line 12 and the control line143 may be used.

FIG. 14 is a plan view that shows the configuration of a pixel circuit110 according to modification example 2. Apart from a feature of thecontrol line 145 and the gate electrode G1 intersecting when viewed inplan view and a feature of the control line 145 having a branchedsection 145 a that is branched in the Y direction for each pixel circuit110, the pixel circuit 110 according to modification example 2 isconfigured in the same manner as the pixel circuit 110 according to theembodiment shown in FIG. 5 .

According to this configuration, in comparison with a case in which thecontrol line 145 is provided not to intersect the gate of the transistor121, it is possible to wire the plurality of control lines that extendin the X direction (the scanning line 12 and the control lines 143, 144and 145) at a high density, and control lines with a narrower pitch arepossible. As a result of this, a smaller electro-optical device (displaysection) and higher definition of display are possible.

In addition, as shown in FIG. 15 , in a case in which the control line145 and the gate electrode G1 intersect, the scanning line drive circuit20 may switch the potential that is supplied to the control line 145 soas to make the waveform when the control signal Gorst(i) is changed froman L level to an H level gradual in comparison with the change from an Hlevel to an L level.

FIG. 15 is a timing chart for describing the operations of anelectro-optical device according to modification example 2. As shown inFIG. 15 , the scanning line drive circuit 20 according to modificationexample 2 changes the potential that is supplied to the control line 145so that the duration of an eighth switching period T8, in which thepotential that is supplied to the control line 145 is switched from thefirst potential V1 to the second potential V2, is sufficiently long incomparison with the duration of a seventh switching period T7, in whichthe potential is switched from the second potential V2 to the firstpotential V1. In this case, after the potential of the gate node g (thegate electrode G1) of the transistor 121 has been established as thepotential Vgate that defines the brightness of the OLED 130, it ispossible to accurately display each pixel with the gradation thatdefines the image signal Vid by preventing propagation of thefluctuations in potential in the control line 145 to the gate electrodeG1. Modification Example 3

In the abovementioned embodiment and modification examples, each pixelcircuit 110 was provided with the transistors 121 to 125, the OLED 130and the storage capacity 132, but the pixel circuit 110 may be providedwith at least the transistor 121, the transistor 122 and the OLED 130.In this case, among the plurality of control lines that extend in the Xdirection (the scanning line 12 and the control lines 143, 144 and 145)provided in the display section 100 in the abovementioned embodiment andmodification examples, the display section 100 may be provided with onlythose that correspond to the transistors that the pixel circuit 110 ofmodification example 3 is provided with in each row. That is, thedisplay section 100 according to modification example 3 may be providedwith one or more control lines that include the scanning line 12 in eachrow. For example, in a case in which the pixel circuit 110 is providedwith the transistor 121, the transistor 122, the OLED 130 and thestorage capacity 132, as the control lines that correspond to each row,only the scanning line 12 would be provided. In addition, each pixelcircuit 110 may be provided with transistors other than the transistors121 to 125, and in such a case, the display section 100 is provided withcontrol lines that correspond to the transistors.

In a case in which one or more control lines that include the scanningline 12 are provided in each row, at least one control line among the 1or more control lines that are provided in each row and extend in the Xdirection are provided to intersect the gate node g (gate electrode G1)of the transistor 121 in plan view. According to this configuration, itis possible to wire the control lines that extend in the X direction ata high density, a smaller electro-optical device (display section) andhigher definition of display are possible.

Furthermore, in a case in which the scanning line drive circuit 20changes the potential of at least one control line that intersects thegate electrode G1 in plan view from among the one or more control linesprovided in each row in the interval from the end of the compensationperiod to the start of the subsequent scanning period, it is preferablethat the waveform of the change in potential be gradual. For example, ina case in which the gate electrode G1 and the scanning line 12intersect, the scanning line drive circuit 20 may change the potentialthat is supplied to the scanning line 12 so that the duration of thesecond switching period T2, in which the potential that is supplied tothe scanning line 12 is switched from the first potential V1 to thesecond potential V2, is sufficiently long in comparison with theduration of the first switching period T1, in which the potential isswitched from the second potential V2 to the first potential V1.According to this configuration, it is possible to prevent propagationof the change in the potential of the control line that intersects thegate electrode G1 to the gate electrode G1, and it is possible toaccurately display each pixel with the gradation that defines the imagesignal Vid.

Furthermore, even in a case in which the scanning line drive circuit 20changes the potential of the control line which is not to intersect thegate electrode G1 when viewed in plan view in the interval from the endof the compensation period to the start of the subsequent scanningperiod, the waveform of the change in potential may be gradual. Even ina case in which the control line is provided not to intersect the gateelectrode G1, there is a parasitic capacity between the control line andthe gate electrode G1. Accordingly, propagation of the change inpotential of the control line to the gate electrode G1 can be preventedby making the waveform gradual when the potential of the control linechanges.

Modification Example 4

In the abovementioned embodiment and modification examples, each levelshift circuit LS is provided with a storage capacity 41, a storagecapacity 44, a transistor 45, a transistor 43 and a transistor 42, butthe level shift circuit LS may be provided with at least the storagecapacity 44, the transistor 43 and the transistor 45. In this case, thedata signal supply circuit 70 and the demultiplexer DM may supply thedata signal Vd(j) to the second electrode of the storage capacity 44 inthe write-in period.

Even in a case in which the level shift circuit LS is not provided withthe storage capacity 41, the data signal Vd(j) that is supplied to thesecond electrode of the storage capacity 44 is supplied to the gate nodeg after being compressed by the capacity ratio k1. As a result of this,since it is even possible to set the potential of the gate node of thedrive transistor with a fine degree of accuracy when the data signal isnot recorded with a fine degree of accuracy, it is possible to supplythe current to the light-emitting element with a high degree of accuracyand a high integrity display is possible.

Modification Example 5

In the abovementioned embodiment and modification examples, the dataline drive circuit 10 is provided with the level shift circuit LS, thedemultiplexer DM and the data signal supply circuit 70, but the dataline drive circuit 10 may be provided with at least the data signalsupply circuit 70. In this case the data line drive circuit 10 suppliesthe data signal Vd(j) to the gate node g directly.

Furthermore, in the abovementioned embodiment and modification examples,the display panel 2 is provided with a storage capacity 50 in each row,but the display panel 2 may be provided without this component.

Modification Example 6

In the abovementioned embodiment and modification examples, the controlcircuit 3 and the display panel 2 were separate entities, but thecontrol circuit 3 and the display panel 2 may be formed on the samesubstrate. For example, the control circuit 3 may be integrated onto thesilicon substrate in addition to the display section 100, the data linedrive circuit 10, the scanning line drive circuit 20 and the like.

Modification Example 7

In the abovementioned embodiment and modification examples, theelectro-optical device 1 had a configuration in which the foregoing wasintegrated onto a silicon substrate, but a configuration in which theelectro-optical device 1 is integrated onto a different semiconductorsubstrate may be used. For example, an SOI substrate may be used. Inaddition, the electro-optical device 1 may be formed on a glasssubstrate or the like using a polysilicon process or the like.Regardless of the substrate used, the invention is effective in aconfiguration in which the pixel circuit 110 is miniaturized and thedrain current in the transistor 121 is changed in an exponentially largemanner with respect to the change in the gate voltage Vgs.

In addition, it is also possible to apply the invention in cases inwhich miniaturization of the pixel circuit is not required.

Modification Example 8

In the abovementioned embodiment and modification examples, aconfiguration in which the data lines 14 were grouped every threecolumns in addition to a data signal being supplied by selecting a dataline 14 in each group in order, was used, but the number of data linesthat configures a group may be a predetermined number that is “2” ormore and “3n” or less. For example, the number of data lines thatconfigures a group may be “2” and may be “4” or more.

In addition, a configuration without grouping, that is, a configurationin which the data signal is supplied to the data lines 14 of each columnconcurrently in line sequence without using a demultiplexer DM may beused. Modification Example 9

In the abovementioned embodiment and modification examples, thetransistors 121 to 125 in the pixel circuit 110 were all P-channeltypes, but the foregoing may all be N-channel types. In addition, acombination of P-channel types and N-channel types may be used asappropriate.

For example, in a case in which the transistors 121 to 125 are allN-channel types, the data signal Vd(j) in the abovementioned embodimentand modification examples may supply a potential in which the positiveand negative polarities have been reversed to each pixel circuit 110. Inaddition, in this case, the sources and the drains of the transistors121 to 125 have the opposite relationships to those in theabovementioned embodiment and modification examples.

In addition, in the abovementioned embodiment and modification examples,the transistor 45 was a P-channel type and the transistor 43 was anN-channel type, but the abovementioned transistors may both be P-channeltypes or N-channel types. Further, the transistor 45 may be an N-channeltype and the transistor 43 may be a P-channel type.

In addition, in the abovementioned embodiment and modification examples,each transistor was a MOS-type transistor, but the foregoing may be athin film transistor. Modification Example 10

In the abovementioned embodiment and modification examples, an OLED thatis a light-emitting element was exemplified as the electro-opticalelement, but for example, an inorganic light-emitting diode, and LED(Light Emitting Diode) or the like that emit light depending on acurrent.

Application Example

Next, an electronic apparatus in which the electro-optical device 1according to the embodiment and the like and an application example willbe described. The electro-optical device 1 is suited to an applicationin which pixels are displayed with at high definition with a small size.Considering this, description is made using a head-mounted display as anexample of an electronic apparatus.

FIG. 16 is a perspective view that shows the exterior of a head-mounteddisplay and FIG. 17 is a view that shows the optical configurationthereof.

Firstly, as shown in FIG. 16 , the exterior of a head-mounted display300 has a temple 310, a bridge 320, and lenses 301L and 301R in the samemanner as a common pair of glasses. In addition, as shown in FIG. 17 ,the head-mounted display 300 is provided with a left eye electro-opticaldevice 1L and a right eye electro-optical device 1R in the corner (thebottom in the drawing) of the lenses 301L and 301R that is in thevicinity of the bridge 320.

The image display screen of the electro-optical device 1L is disposed tobe on the left side in FIG. 17 . As a result of this, a display imagethat results from the electro-optical device 1L is output in thedirection of 9 o'clock in the drawing through an optical lens 302L. Ahalf mirror 303L reflects a display image that results from theelectro-optical device 1L in the direction of 6 o'clock and allows lightthat enters from the direction of 12 o'clock to pass therethrough.

The image display screen of the electro-optical device 1R is disposed tobe on the right side that is opposite the electro-optical device 1L. Asa result of this, a display image that results from the electro-opticaldevice 1R is output in the direction of 3 o'clock in the drawing throughan optical lens 302R. A half mirror 303R reflects a display image thatresults from the electro-optical device 1R in the direction of 6 o'clockand allows light that enters from the direction of 12 o'clock to passtherethrough.

In this configuration, a user of the head-mounted display 300 canobserve display images that result from the electro-optical devices 1Land 1R in a see-through state superimposed on an external state.

In addition, in this head-mounted display 300, among the images in botheyes that involve parallax, if the left eye image is displayed in theelectro-optical device 1L and the right eye image is displayed in theelectro-optical device 1R, it is possible for the user to perceive adisplayed image as if the image had depth and a stereoscopic effect (3Ddisplay).

Additionally, in addition to a head-mounted display 300, theelectro-optical device 1 may be used in electronic viewfinders in videocameras, digital cameras with interchangeable lenses and the like.

The entire disclosure of Japanese Patent Application No. 2012-084743,filed Apr. 3, 2012 is expressly incorporated by reference herein.

What is claimed is:
 1. An electro-optical device comprising: a firstfeed line; a second feed line; a control line; a light-emitting element;a first transistor that has a first gate electrode and a first sourceregion and is configured to supply a current from the first feed line tothe light-emitting element, the current corresponding to a voltagebetween the first gate electrode and the first source region; a secondtransistor that has a second gate electrode electrically connected tothe control line, the second transistor electrically connecting thesecond feed line and the light-emitting element; and a first insulatinglayer disposed in a layer between the second gate electrode and thecontrol line, the first insulating layer including a contact hole,wherein, the second gate electrode and the control line are electricallyconnected via the contact hole, and in a plan view, the control lineoverlaps with the contact hole and the second gate electrode.
 2. Theelectro-optical device according to claim 1, further comprising: ascanning line; a data line that intersects the scanning line; a thirdtransistor that has a third gate electrode electrically connected to thescanning line, the third transistor electrically connecting the firstgate electrode and the data line; and a pixel circuit that is providedto correspond to an intersection of the scanning line and the data line,the pixel circuit including the first transistor, the second transistor,and the third transistor.
 3. The electro-optical device according toclaim 2, wherein in the plan view the control line overlaps with twotransistors included in the pixel circuit.
 4. An electronic apparatuscomprising the electro-optical device according to claim
 3. 5. Theelectro-optical device according to claim 2, further comprising: asecond insulating layer; and a first storage capacitor configured tostore a charge that depends on a data signal supplied through the dataline and the third transistor, the first storage capacitor including afirst capacitor electrode and the first gate electrode, the firststorage capacitor being formed by the first gate electrode and the firstcapacitor electrode sandwiching the second insulating layer.
 6. Anelectronic apparatus comprising the electro-optical device according toclaim
 5. 7. An electronic apparatus comprising the electro-opticaldevice according to claim
 2. 8. An electronic apparatus comprising theelectro-optical device according to claim 1.